The carbon nanotube field emitter array was grown on silicon substrate through\r\na resist-assisted patterning (RAP) process. The shape of the carbon nanotube array is\r\nelliptical with 2.0 Ã?â?? 0.5 mm2 for an isotropic focal spot size at anode target. The field\r\nemission properties with triode electrodes show a gate turn-on field of 3 V/Ã?µm at an anode\r\nemission current of 0.1 mA. The author demonstrated the X-ray source with triode\r\nelectrode structure utilizing the carbon nanotube emitter, and the transmitted X-ray image\r\nwas of high resolution.
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